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  ? semiconductor components industries, llc, 2006 march, 2006 ? rev. 8 1 publication order number: pzt2907at1/d pzt2907at1 preferred device pnp silicon epitaxial transistor this pnp silicon epitaxial transistor is designed for use in linear and switching applications. the device is housed in the sot-223 package which is designed for medium power surface mount applications. features ? npn complement is pzt2222at1 ? the sot-223 package can be soldered using wave or reflow ? sot-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. the formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. ? pb ? free packages are available maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 60 vdc collector ? base voltage v cbo ? 60 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 600 madc thermal characteristics characteristic symbol max unit total device dissipation (note 1) t a = 25 c p d 1.5 12 w mw/ c thermal resistance junction ? to ? ambient (note 1) r  ja 83.3 c/w lead temperature for soldering, 0.0625 from case time in solder bath t l 260 10 c sec operating and storage temperature range t j , t stg ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 with 1 oz and 713 mm 2 of copper area. preferred devices are recommended choices for future use and best overall value. sot ? 223 case 318e style 1 marking diagram collector 2, 4 1 base 3 emitter ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. device package shipping ? ordering information pzt2907at1 sot ? 223 1000 / tape & reel PZT2907AT1G sot ? 223 (pb ? free) 1000 / tape & reel pzt2907at3 sot ? 223 4000 / tape & reel 1 ayw p2f   p2f = specific device code a = assembly location y = year w = work week  = pb ? free package http://onsemi.com (note: microdot may be in either location) pzt2907at3g sot ? 223 (pb ? free) 4000 / tape & reel
pzt2907at1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? base breakdown voltage (i c = ? 10  adc, i e = 0) v (br)cbo ? 60 ? ? vdc collector ? emitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo ? 60 ? ? vdc emitter ? base breakdown voltage (i e = ? 10  adc, i c = 0) v (br)ebo ? 5.0 ? ? vdc collector ? base cutoff current (v cb = ? 50 vdc, i e = 0) i cbo ? ? ? 10 nadc collector ? emitter cutoff current (v ce = ? 30 vdc, v be = 0.5 vdc) i cex ? ? ? 50 nadc base ? emitter cutoff current (v ce = ? 30 vdc, v be = ? 0.5 vdc) i bex ? ? ? 50 nadc on characteristics (note 2) dc current gain (i c = ? 0.1 madc, v ce = ? 10 vdc) (i c = ? 1.0 madc, v ce = ? 10 vdc) (i c = ? 10 madc, v ce = ? 10 vdc) (i c = ? 150 madc, v ce = ? 10 vdc) (i c = ? 500 madc, v ce = ? 10 vdc) h fe 75 100 100 100 50 ? ? ? ? ? ? ? ? 300 ? ? collector-emitter saturation voltages (i c = ? 150 madc, i b = ? 15 madc) (i c = ? 500 madc, i b = ? 50 madc) v ce(sat) ? ? ? ? ? 0.4 ? 1.6 vdc base-emitter saturation voltages (i c = ? 150 madc, i b = ? 15 madc) (i c = ? 500 madc, i b = ? 50 madc) v be(sat) ? ? ? ? ? 1.3 ? 2.6 vdc dynamic characteristics current-gain ? bandwidth product (i c = ? 50 madc, v ce = ? 20 vdc, f = 100 mhz) f t 200 ? ? mhz output capacitance (v cb = ? 10 vdc, i e = 0, f = 1.0 mhz) c c ? ? 8.0 pf input capacitance (v eb = ? 2.0 vdc, i c = 0, f = 1.0 mhz) c e ? ? 30 pf switching times turn-on time (v cc = ? 30 vdc, i c = ? 150 madc, i b1 = ? 15 madc) t on ? ? 45 ns delay time t d ? ? 10 rise time t r ? ? 40 turn-off time (v cc = ? 6.0 vdc, i c = ? 150 madc, i b1 = i b2 = ? 15 madc) t off ? ? 100 ns storage time t s ? ? 80 fall time t f ? ? 30 2. pulse test: pulse width 300  s, duty cycle 2.0%.
pzt2907at1 http://onsemi.com 3 figure 1. delay and rise time test circuit figure 2. storage and fall time test circuit input z o = 50  prf = 150 hz rise time 2.0 ns 0 1.0 k 50 ?16 v 200 ns ?30 v 200 to oscilloscope rise time 5.0 ns 0 1.0 k 50 ?30 v 200 ns ?6.0 v 37 to oscilloscope rise time 5.0 ns +15 v 1.0 k 1n916 input z o = 50  prf = 150 hz rise time 2.0 ns typical electrical characteristics 1000 100 10 ?1000 ?100 ?10 ?1.0 ?0.1 i c , collector current (ma) h fe , current gain t j = 125 c t j = ?55 c t j = 25 c figure 3. dc current gain 1000 100 10 ?1000 ?100 ?10 ?1.0 v ce = ?20 v t j = 25 c i c , collector current (ma) figure 4. current gain bandwidth product f t , current-gain bandwidth product (mhz) ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 voltage (volts) ?500 ?200 ?100 ?50 ?20 ?10 ?0.1 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 i c , collector current (ma) figure 5. ?on? voltage t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = ?10 v v ce(sat) @ i c /i b = 10 30 20 10 7.0 5.0 3.0 2.0 ?0.1 ?0.2 ?0.3 ?0.5 ?0.7 ?1.0 ?2.0 ?3.0 ?5.0 ?7.0 ?10 ?20 ?30 reverse voltage (volts) figure 6. capacitances capacitance (pf) c eb c cb
pzt2907at1 http://onsemi.com 4 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue l style 1: pin 1. base 2. collector 3. emitter 4. collector a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 1.5 0.059  mm inches  scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0   *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 pzt2907at1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.


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